期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 9, 页码 3748-3755出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2926742
关键词
Channel temperature; electrothermal simulation; GaN high electron mobility transistor (HEMT); self-heating; thermal resistance
资金
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Ontario Research Fund Research Excellence (ORF-RE)
In this paper, we study the self-heating mechanism and its impact on electrical performance of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal TCAD simulations. We propose an equivalent channel temperature to quantify the current degradation due to self-heating and also resolve the discrepancies between temperature measurements through electrical methods and thermal methods in the literature. We then explain the equivalent channel temperature's behavior using the temperature-and field-dependent electron transport theory for short gate length HEMTs. The implications and guidelines to the various aspects of device design are also discussed.
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