Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

标题
Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 8, Pages 3356-3364
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-06-26
DOI
10.1109/ted.2019.2921618

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