Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2

标题
Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1399-1402
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-07-30
DOI
10.1109/led.2019.2931697

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now