期刊
APPLIED PHYSICS LETTERS
卷 115, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5111326
关键词
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资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DESC0008505]
- Vannevar Bush Faculty Fellowship program - Basic Research Office of the Assistant Secretary of Defense for Research and Engineering
- National Science Foundation [ECCS-1542152]
- Air Force Office of Scientific Research [FA9550-15RXCOR198]
- Office of Naval Research [N00014-15-1-0045]
Low-damping magnetic oxide thin films with small thicknesses are essential for efficient insulator spintronic devices, particularly those driven by spin torque effects. Here, we investigate the depth-resolved compositional and magnetic properties of epitaxial spinel MgAl0.5Fe1.5O4 (MAFO), which has recently been reported as a promising low-damping insulator. We find that approximate to 11 nm films exhibit optimal Gilbert damping, with a typical damping parameter of 0.001. While defects due to strain relaxation in the bulk of the film contribute to increased damping for large film thickness, the damping increase in thinner films is attributed to the presence of a chemically disordered magnetic dead layer at the film/substrate interface. This interfacial dead layer arises from an Fe-deficient MAFO layer. Notably, this layer is only about one-sixth the thickness of that found at the interface between yttrium iron garnet films and gadolinium gallium garnet substrates, making MAFO an ideal thin-film insulator for spin-torque applications.
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