☆ 4.7 Article

Ultrahigh-Q photonic crystal nanocavities based on 4H silicon carbide

OPTICA (2019)

期刊

OPTICA

卷 6, 期 8, 页码 991-995

出版社

OPTICAL SOC AMER

DOI: 10.1364/OPTICA.6.000991

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类别

Optics

资金

National Research Foundation of Korea (NRF) [2017R1A2B4003374]
Japan Society for the Promotion of Science (JSPS) [15H03993]
National Research Foundation of Korea [2017R1A2B4003374] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Grants-in-Aid for Scientific Research [15H03993] Funding Source: KAKEN

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摘要

Photonic nanocavities with high quality (Q) factors are essential components for integrated optical circuits. The use of crystalline silicon carbide (SiC) for such nanocavities enables the realization of devices with superior properties. We fabricate ultrahigh-Q SiC photonic crystal nanocavities by etching air holes into a 4H-SiC slab that is prepared without using hydrogen ion implantation, which usually causes higher absorption losses. In addition, compared to usual designs, a relatively thin slab is utilized to avoid losses through cross-polarized mode coupling induced by the tapered air holes. We obtain a heterostructure nanocavity with a high experimental Q factor of 6.3 x 10(5), which is 16 times larger than the highest Q among the previously reported values for nanocavities based on crystalline SiC. We also show that our nanocavity exhibits a high normalized second-harmonic conversion efficiency of 1900%/W. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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