4.5 Article

Site-Selective Quantum Control in an Isotopically Enriched 28Si/Si0.7Ge0.3 Quadruple Quantum Dot

期刊

PHYSICAL REVIEW APPLIED
卷 11, 期 6, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.11.061006

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资金

  1. Army Research Office [W911NF-15-1-0149]
  2. DARPA [D18AC0025]
  3. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4535]
  4. Princeton Center for Complex Materials
  5. National Science Foundation Materials Research Science and Engineering Center [DMR-1420541]

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Silicon spin qubits are a promising quantum-computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device-fabrication techniques. In recent years, high-fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here we demonstrate coherent spin control in a quadruple quantum dot fabricated from isotopically enriched Si-28. We tune the ground-state charge configuration of the quadruple dot down to the single-electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved with the use of electric dipole spin resonance in a magnetic field gradient. We execute a resonant controlled-NOT gate between two adjacent spins in 270 ns.

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