Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

We have demonstrated full-color and white-color micro light-emitting diodes (mu LEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire mu LED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color mu LEDs demonstrate strong and highly stable white-light emission with high color rendering index of similar to 94. The mu LEDs are in circular shapes with the diameter varying from 30 to 100 mu m. Such high-performance mu LEDs are perfectly suitable for the next generation of high-resolution micro-display applications.