期刊
PLASMA PHYSICS REPORTS
卷 45, 期 6, 页码 551-560出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063780X19060096
关键词
-
资金
- Prokhorov General Physics institute of the Russian Academy of Sciences [0024-2018-0046]
An electrodeless microwave jet plasma source is considered, and its various applications in the technology of chemical vapor deposition of diamond films and dimension increasing of small diamond single crystals synthesized at high pressures and temperatures are discussed. The plasma jet is ignited in an atmospheric-pressure gas (argon) flow with hydrogen and methane additives. The operation of the microwave jet reactor is described, and the plasma characteristics measured using emission spectroscopy are presented. The brightly glowing atmospheric-pressure plasma jet is ignited and stably burns at a microwave power of 1 kW supplied from a microwave oven magnetron. The specific microwave power density absorbed by the compact plasma jet (10(4) W/cm(3)) is comparable with that absorbed by a dc arc. The growth rate of the polycrystalline diamond layer amounts to 40 mu m/h. The process of film deposition on the substrate can be controlled by scanning the substrate surface with the jet.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据