Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

出版年份 2016 全文链接

标题

作者

关键词

Aluminum nitride, Field-effect transistors, Transparent electronics, Indium–gallium–zinc-oxide

出版物

Volume 379, Issue -, Pages 270-276

出版商

Elsevier BV

发表日期

2016-04-30

DOI

10.1016/j.apsusc.2016.04.083

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