Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

出版年份 2016 全文链接

标题

作者

关键词

GaN, Pulsed laser deposition, Stress-free, Surface roughness, Crystalline quality

出版物

Volume 369, Issue -, Pages 414-421

出版商

Elsevier BV

发表日期

2016-02-07

DOI

10.1016/j.apsusc.2016.02.044

联系作者

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now