Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device

出版年份 2016 全文链接

标题

作者

关键词

Resistive random access memory (RRAM), Bipolar and unipolar resistive switching (BRS and URS), Composition of conducting filaments

出版物

Volume 360, Issue -, Pages 338-341

出版商

Elsevier BV

发表日期

2015-11-06

DOI

10.1016/j.apsusc.2015.11.022

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