4.6 Article

In situ growth of monocrystal p-CuGaO2 nanosheet as a hole transfer layer in a photoelectrode for solar hydrogen production

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出版社

IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab2fee

关键词

hole transfer layer; CuGaO2; bromide ion

资金

  1. National Key R&D Program of China [2017YFE0120700]
  2. National Natural Science foundation of China [21875105, 51627810, 21802071]
  3. National Natural Science Foundation of Jiangsu Province [BK20170979]
  4. Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University

向作者/读者索取更多资源

Hole transporting layers are very important for solar energy conversion devices, such as perovskite solar cells, organic photovoltaic devices and solar water splitting cells. Recently, CuGaO2 as a hole transporting layer has attracted intense interest due to its high hole mobility and wide band gap. However, there is still a challenge to prepare a semitransparent CuGaO2 film. It is desirable to develop a facile method to prepare a CuGaO2 film with good electronic contact and semi-transparency for application in solar energy conversion devices. Herein, for the first time, a one-step hydrothermal method is developed to directly grow semi-transparency p-CuGaO2 films on FTO substrates. CuGaO2 single crystals with much larger grain sizes are obtained, which are important for the applications as hole transporting layers. We find that Br- in the precursor solution plays a key role in obtaining a semitransparent CuGaO2 film. The effects of Br- on the growth of CuGaO2 are also investigated in details. As an example, a CuGaO2 film is used as a hole transfer layer to improve photoelectrochemical performance of a CuInS2 photocathode for solar water splitting.

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