Roles of grain boundary and oxygen vacancies in Ba0.6Sr0.4TiO3 films for resistive switching device application

2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3

(2015) Xiao Shen et al.   Advanced Electronic Materials

Vacancy breathing by grain boundaries—a mechanism of memristive switching in polycrystalline oxides

(2013) Xiao Shen et al.   MRS Communications

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application

(2012) Chang Hwa Jung et al.   APPLIED PHYSICS LETTERS

Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content

(2012) W. Z. Chang et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions

(2009) R. Yang et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology