期刊
APPLIED PHYSICS LETTERS
卷 109, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4959098
关键词
-
资金
- JSPS Core-to-Core program
- China Scholarship Council [201206230077]
- [23000009]
- [15H05494]
- Grants-in-Aid for Scientific Research [15H05494] Funding Source: KAKEN
Coating n-type buffer and protective layers on Cu2O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu2O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu2O are examined. It is found that a Ga2O3 buffer layer can form a buried junction with Cu2O, which inhibits Cu2O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO2 thin protective layer not only improves the stability of the photocathode but also enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of over-layers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据