期刊
APPLIED PHYSICS LETTERS
卷 108, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4940194
关键词
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资金
- Major State Basic Research Development Program of China [2013CB632103]
- National Natural Science Foundation of China [61307079, 61223005, 61376057]
- Youth Innovation Promotion Association, CAS [2015091]
- Beijing Natural Science Foundation [2142031]
- Beijing Municipal Science and Technology Commission project [Z141100003814002]
- [GJHZ1316]
We report an investigation of normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge0.94Sn0.06 active layer grown using sputter epitaxy on a Ge(100) substrate. A low dark current density of 0.24 A/cm(2) was obtained at a reverse bias of 1V. A high optical responsivity of the Ge0.94Sn0.06/Ge p-i-n PDs at zero bias was achieved, with an optical response wavelength extending to 1985 nm. The temperature-dependent optical-response measurement was performed, and a clear redshift absorption edge was observed. This work presents an approach for developing efficient and cost-effective GeSn-based infrared devices. (C) 2016 AIP Publishing LLC.
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