期刊
APPLIED PHYSICS LETTERS
卷 109, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4972988
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资金
- Cambridge Display Technology Limited [2672530]
- KAUST
- Center for Absorption in Science of the Ministry of Immigrant Absorption
We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at < 200 degrees C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1] benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm(2)/Vs. Hybrid complementary inverters based on these devices show high signal gain (> 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics. Published by AIP Publishing.
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