Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

标题
Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 125, Issue 22, Pages 223907
出版商
AIP Publishing
发表日期
2019-06-14
DOI
10.1063/1.5097748

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