Characteristics of MoS2 monolayer non-volatile memory field effect transistors affected by the ferroelectric properties of BiFeO3 thin films with Pt and SrRuO3 bottom electrodes grown on glass substrates

标题
Characteristics of MoS2 monolayer non-volatile memory field effect transistors affected by the ferroelectric properties of BiFeO3 thin films with Pt and SrRuO3 bottom electrodes grown on glass substrates
作者
关键词
Ferroelectric BiFeO, 3, gate dielectric layer, MoS, 2, monolayer, Ferroelectric nonvolatile memory transistor, Pt bottom electrode, SrRuO, 3, bottom electrode
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 792, Issue -, Pages 673-678
出版商
Elsevier BV
发表日期
2019-04-08
DOI
10.1016/j.jallcom.2019.04.073

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