Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure
出版年份 2016 全文链接
标题
Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 109, Issue 5, Pages 053504
出版商
AIP Publishing
发表日期
2016-08-03
DOI
10.1063/1.4960105
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
- (2015) Tohru Oka et al. Applied Physics Express
- Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors
- (2015) Chao Liu et al. APPLIED PHYSICS LETTERS
- Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric
- (2015) Xing Lu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
- (2015) Masaaki Kuzuhara et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
- (2014) Zhao Jun Liu et al. IEEE ELECTRON DEVICE LETTERS
- Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors
- (2014) Ya-Ju Lee et al. OPTICS EXPRESS
- Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
- (2013) Z. Li et al. APPLIED PHYSICS LETTERS
- Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
- (2013) Keisuke Shinohara et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- 360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays
- (2013) Zhao Jun Liu et al. Journal of Display Technology
- Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array
- (2011) Jonathan J. D. McKendry et al. JOURNAL OF LIGHTWAVE TECHNOLOGY
- Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications
- (2011) F.G. Kalaitzakis et al. MICROELECTRONIC ENGINEERING
- Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper
- (2011) Kei May Lau et al. OPTICS EXPRESS
- Analysis of reverse tunnelling current in GaInN light-emitting diodes
- (2010) J. Cho et al. ELECTRONICS LETTERS
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
- (2009) M.H. Crawford IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
- (2008) Hirotaka Otake et al. Applied Physics Express
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- (2008) Masahito Kodama et al. Applied Physics Express
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now