Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
出版年份 2016 全文链接
标题
Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 108, Issue 10, Pages 103105
出版商
AIP Publishing
发表日期
2016-03-10
DOI
10.1063/1.4943205
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