Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes

Both N-type and P-type semiconducting materials are essential in the integrated circuit and optoelectronic industry. Herein, the intrinsic P-type ReSe2 is converted to N-type by Nb-alloying. Despite the efficient carrier type conversion, we also measured the electric characteristics and photo-response of few-layer Nb0.125Re0.875Se2 based field-effect transistors under different lasers. The devices showed comparable mobility with pristine ReSe2 (on the order of 0.1 cm(2) V-1 s(-1)). Moreover, such Nb0.125Re0.875Se2 shows high sensitivity to different visible lasers and has a light-improved mobility up to 1 cm(2) V-1 s(-1). The highest photoresponsivity reaches 11.7 A/W and external quantum efficiency reaches 2730% under 532 nm laser. Published by AIP Publishing.