4.6 Article Retracted Publication

被撤回的出版物: Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance (Retracted article. See vol. 110, 2017)

期刊

APPLIED PHYSICS LETTERS
卷 108, 期 10, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4943786

关键词

-

资金

  1. Seoul National University, Seoul, Republic of Korea, through Eui-San Research Center and Research Institute of Advanced Materials (RIAM)
  2. Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [0417-20150112]
  3. BK21PLUS SNU Materials Division for Educating Creative Global Leaders [F15SN02D1702]

向作者/读者索取更多资源

A reliable on/off switching with an sub-kT/q subthreshold slope (38 mV/dec at room temperature) is experimentally demonstrated with using selectively nucleated laterally crystallized single-grain Pb(Zr,Ti)O-3 (PZT) ferroelectric and ZrTiO4 paraelectric thin-film. The combination of ferroelectric and paraelectric thin-film is enabled to form a negative capacitance (NC) at the weak inversion region. However, the PZT grain-boundary easily degrades the NC properties after switching the on/off more than 10(8) times. It is found that the polarization of PZT is diminished from the path of grain-boundary. Here, we effectively suppress the degradation of NC MOS-FET which did not showed any fatigue even after 10(8) on/off switching. (C) 2016 AIP Publishing LLC.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据