期刊
APPLIED PHYSICS LETTERS
卷 108, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4950867
关键词
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资金
- National Natural Science Foundation of China [61223005, 61376046, 11405017, 61574026]
- Fundamental Research Funds for the Central Universities [DUT15LK15, DUT15RC(3)016]
- Liaoning Provincial Natural Science Foundation of China [2014020004]
- Jiangxi Provincial Natural Science Foundation of China [20133ACB20005]
In this paper, hexagonal structure phase-pure wide-band gap epsilon-Ga2O3 films were grown by metal organic chemical vapor deposition on 6H-SiC substrates. The epsilon-Ga2O3 films with good crystal quality were verified by high-resolution X-ray diffraction. The out-of-plane epitaxial relationship between epsilon-Ga2O3 films and 6H-SiC substrates is confirmed to be epsilon-Ga2O3 (0001)//6H-SiC (0001), and the in-plane epitaxial relationship is also confirmed to be epsilon-Ga2O3 < 11 (2) over bar0 >//6H-SiC < 11 (2) over bar0 >. The SEM and AFM images show that the epsilon-Ga2O3 films are uniform and flat. The epsilon-Ga2O3 films are thermally stable up to approximately 800 degrees C and begin to transform into beta-phase Ga2O3 at 850 degrees C. Then, they are completely converted to beta-Ga2O3 films under 900 degrees C. The high-quality epsilon-Ga2O3 films with hexagonal structure have potential application in the optoelectronic field. Published by AIP Publishing.
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