Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2

标题
Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 109, Issue 17, Pages 171903
出版商
AIP Publishing
发表日期
2016-10-27
DOI
10.1063/1.4966275

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