期刊
APPLIED PHYSICS LETTERS
卷 109, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4968822
关键词
-
资金
- Designing Materials to Revolutionize and Engineer our Future (DMREF) Program [1534221]
- National Science Foundation
- National Science Foundation [DGE 1256260]
- Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
- Direct For Mathematical & Physical Scien [1534221] Funding Source: National Science Foundation
- Division Of Materials Research [1534221] Funding Source: National Science Foundation
We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of beta-Ga2O3. The fundamental band gap is indirect, but the minimum direct gap is only 29 meV higher in energy, which explains the strong near-edge absorption. Our calculations verify the anisotropy of the absorption onset and explain the range (4.4-5.0 eV) of experimentally reported band-gap values. Our results for the radiative recombination rate indicate that intrinsic light emission in the deep-ultra-violet (UV) range is possible in this indirect-gap semiconductor at high excitation. Our work demonstrates the applicability of beta-Ga2O3 for deep-UV detection and emission. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据