4.6 Article

Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

期刊

APPLIED PHYSICS LETTERS
卷 109, 期 8, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4961673

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资金

  1. National Key Project for Basic Research [2014CB921002]
  2. National Natural Science Foundation of China [11504254, 11374225, 11574227]
  3. Priority Academic Program Development of Jiangsu Higher Education Institutions
  4. USTS Cooperative Innovation Center for Functional Oxide Films and Optical Information

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Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V-oc = 320mV and short-circuit current density J(sc) = 5.62 mA/cm(2) were measured under illumination of 532-nm light with the power of 100 mW/cm(2). In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix. Published by AIP Publishing.

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