期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 67, 期 7, 页码 2946-2963出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2019.2913645
关键词
Balun; carrier aggregation; CMOS; EVM; fifth-generation (5G); front-end (FE); handset; low-noise amplifier (LNA); millimeter-wave (mm-Wave); OFDM; power amplifier (PA); phase shifter (PS); phased array; TR switch; 28 GHz
资金
- Qualcomm Technologies, Inc.
This paper reports a transmit-receive (Tx-Rx) front-end (FE) in bulk CMOS targeting fifth-generation (5G) mobile user equipment (UE)-phased arrays. Block-level specifications are first reviewed based on link budget and UE array beam steering considerations, and compared against measured standalone power/low-noise amplifier and phase shifter test circuit performances. Then, the codesign of the Tx-Rx switch and antenna impedance matching is investigated for the important case of wideband dual-resonance networks, leading to a proposed topology that is experimentally verified using silicon passive test structures. A fully integrated FE prototype is fabricated in 1.1-V 1P6M 40-nm bulk CMOS and characterized in detail across digital gain and phase settings. Measurements show Tx-mode P1 dB/PAE1 dB >= 14.6 dBm/21.9% across 27-30 GHz, and peak Pout/PAE = 6.5dBm/8.8% at 27 GHz for an 8 x 100-MHz carrier-aggregated 64-QAM OFDM signal. In Rx-mode, a noise figure of 5.5-6 dB and an input-referred third-order intercept point of -8.5 to -6 dBm are achieved across 27-33 GHz. Normalized to area/power consumption, the achieved performance is the state of the art relative to the most recent CMOS/SiGe FEs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据