Effects of active region design on gain and carrier injection and transport of CW $(20\bar{2}\bar{1})$ semipolar InGaN laser diodes

标题
Effects of active region design on gain and carrier injection and transport of CW $(20\bar{2}\bar{1})$ semipolar InGaN laser diodes
作者
关键词
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出版物
Applied Physics Express
Volume 9, Issue 9, Pages 092104
出版商
Japan Society of Applied Physics
发表日期
2016-08-26
DOI
10.7567/apex.9.092104

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