Suppressing the formation of GeOxby doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

标题
Suppressing the formation of GeOxby doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact
作者
关键词
-
出版物
Applied Physics Express
Volume 9, Issue 2, Pages 021301
出版商
Japan Society of Applied Physics
发表日期
2016-01-13
DOI
10.7567/apex.9.021301

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