期刊
CERAMICS INTERNATIONAL
卷 45, 期 8, 页码 10356-10363出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2019.02.093
关键词
Magnesium hydroxide; Magnesium oxide; Thin film; Chemical bath deposition; Annealing; Quantitative XPS
资金
- Mexican Consejo Nacional de Ciencia y Tecnologia
- Centro Mexicano de Innovacion en Energia Solar (CeMIE-Sol), from sectorial fund CONACYT-Sener-Sustentabilidad Energetica CeMIE-Sol 2013-02 [27]
- project CONACYT Problemas Nacionales [2015-01-1739]
- CONACYT [419529]
The chemical solution deposition of Mg(OH)(2) thin films on glass substrates and their transformation to MgO by annealing in air is presented. The chemical solution deposition consists of a chemical reaction employing an aqueous solution composed of magnesium sulfate, triethanolamine, ammonium hydroxide, and ammonium chloride. The as-deposited films were annealed at different temperatures ranging from 325 to 500 degrees C to identify the Mg(OH)(2)-to-MgO transition temperature, which resulted to be around 375 degrees C. Annealing the as-deposited Mg (OH)(2) films at 500 degrees C results in homogeneous MgO thin films. The properties of the Mg(OH)(2) and MgO thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, UV-Vis spectroscopy, and by circular transmission line model. Results by X-ray diffraction show that the as-deposited thin films have a brucite structure (Mg(OH)(2)), that transforms into the periclase phase (MgO) after annealing at 500 degrees C. For the as-deposited Mg(OH)(2) thin film, a nanowall surface morphology is found; this morphology is maintained after the annealing to obtain MgO, which occurred with the evident formation of pores on the nanowall surface. The assessed chemical composition from X-ray photoelectron spectroscopy yields Mg0.36O0.64 (O/Mg ratio of 1.8) for the as-deposited Mg(OH)(2) film, where the expected stoichiometric composition is Mg0.33O0.67 (O/Mg ratio of 2.0); the same assessment yields Mg0.60O0.40 (O/Mg ratio of 0.7) for the annealed thin film, which indicates the obtainment of a MgO material with oxygen vacancies, given the deviation from the stoichiometric composition of Mg0.50O0.50 (O/Mg ratio of 1.0). These results confirm the deposition of Mg(OH)(2) films and the obtainment of MgO after the heat-treatment. The energy band gap of the films is found to be 4.64 and 5.10 eV for the as-deposited and the film annealed at 500 degrees C, respectively. The resistivity of both Mg(OH)(2) and MgO thin films lies around 10(8) Omega.cm.
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