期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 38, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201904416
关键词
mixed-valence; polarization-sensitive; quasi-1D; (SnSnS3)-Sn-II-S-IV; UV-vis-NIR
类别
资金
- National Natural Science Foundation of China [61622406, 61571415, 51502283, 61625404, 61888102]
- National Key Research and Development Program of China [2017YFA0207500, 2016YFB0700700]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- Beijing Academy of Quantum Information Sciences [Y18G04]
Mixed-valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to structural asymmetry, which originate from the discrepant distribution of atoms with different valence. This study reports an unexploited mixed-valence-driven quasi-1D (SnSnS3)-Sn-II-S-IV crystal, which exhibits widely and distinctively anisotropic polarized-light absorption reaching approximate to 3.4 from the deep ultraviolet to near-infrared region (250-850 nm). The fabricated polarization-sensitive photodetectors based on highly air-stable (SnSnS3)-Sn-II-S-IV nanowires display strong linear dichroism among the UV-vis-NIR spectrum with responsivity exceeding approximate to 150 A W-1. Furthermore, the devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed-valence-driven quasi-1D ternary sulfide (SnSnS3)-Sn-II-S-IV excites interest in low-symmetry semiconductors for developing broadly spectral polarization-sensitive photodetectors with environmental stability and mechanical flexibility.
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