期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 20, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201903617
关键词
charge transport; hall effect; mobility; organic semiconductors; organic field-effect transistors (OFETs); organic thin-film transistors (OTFTs); polycrystalline films
类别
资金
- National Science Foundation [ECCS-1806363, ECCS-1709222]
- Rutgers Energy Institute (REI)
- Center for Advanced Soft-Electronics at Pohang University of Science and Technology - Republic of Korea's Ministry of Science, ICT and Future Planning as Global Frontier Project [CASE-2011-0031628]
- Engineering and Physical Sciences Research Council (EPSRC) [EP/G037515/1]
- European Research Council (ERC) AMPRO Project [280221]
- King Abdullah University of Science and Technology (KAUST)
- Center for Absorption in Science of the Ministry of Immigrant Absorption in Israel under the framework of the KAMEA Program
- National Research Foundation of Korea [2011-0031628] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Highly crystalline thin films in organic semiconductors are important for applications in high-performance organic optoelectronics. Here, the effect of grain boundaries on the Hall effect and charge transport properties of organic transistors based on two exemplary benchmark systems is elucidated: (1) solution-processed blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C-8-BTBT) small molecule and indacenodithiophene-benzothiadiazole (C16IDT-BT) conjugated polymer, and (2) large-area vacuum evaporated polycrystalline thin films of rubrene (C42H28). It is discovered that, despite the high field-effect mobilities of up to 6 cm(2) V-1 s(-1) and the evidence of a delocalized band-like charge transport, the Hall effect in polycrystalline organic transistors is systematically and significantly underdeveloped, with the carrier coherence factor alpha < 1 (i.e., yields an underestimated Hall mobility and an overestimated carrier density). A model based on capacitively charged grain boundaries explaining this unusual behavior is described. This work significantly advances the understanding of magneto-transport properties of organic semiconductor thin films.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据