期刊
ACS NANO
卷 13, 期 8, 页码 9638-9646出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b04829
关键词
MoS2; phototransistor; heterostructure; internal quantum efficiency; internal responsivity
类别
资金
- National Creative Research Laboratory program National Research Foundation of Korea - Korean Ministry of Science and ICT [2012026372]
- National Research Foundation of Korea (NRF) - Ministry of Science and ICT of Korea [NRF-2017R1C1B2002323]
- Institute for Basic Science [IBS-R011-D1]
- Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried. However, the intrinsic optoelectronic characteristics because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated out to achieve further enhanced optoelectronic character of monolayer MoS2 have still not been explored until now photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2 including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.
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