4.8 Article

Ultrasensitive Hybrid MoS2-ZnCdSe Quantum Dot Photodetectors with High Gain

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 26, 页码 23667-23672

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b03971

关键词

MoS2; transition-metal dichalcogenides; quantum dots; hybrid 2D-0D photodetector; energy transfer

资金

  1. National Natural Science Foundation of China [61674158, 61722408, 61835012, 61474131, 61574152]
  2. Major State Basic Research Development Program [2016YFB0400801, 2016YFA0203900]
  3. Key Research Project of Frontier Sciences of Chinese Academy of Sciences [QYZDY-SSW-JSC042, QYZDB-SSW-JSC016]
  4. Natural Science Foundation of Shanghai [16ZR1447600, 17JC1400302]

向作者/读者索取更多资源

Recently, two-dimensional (2D) materials, especially transition-metal dichalcogenides (TMDCs), have attracted extensive interest owing to their potential applications in optoelectronics. Here, we demonstrate a hybrid 2D-zero-dimensional (OD) photodetector, which consists of a single-layer or few-layer molybdenum disulfide (MoS2) thin film and a thin layer of core/shell zinc cadmium selenide/zinc sulfide (ZnCdSe/ZnS) colloidal quantum dots (QDs). It is worth mentioning that the photoresponsivity of the hybrid 2D-0D photodetector is 3 orders of magnitude larger than the TMDC photodetector (from 10 to 10(4)A W-1). The detectivity of the hybrid structure detector is up to 10(12) Jones, and the gain is up to 10(5). Due to an effective energy transfer from the photoexcited QD sensitizing layer to MoS2 films, light absorption is enhanced and more excitons are generated. Thus, this hybrid 2D-0D photodetector takes advantage of high charge mobility in the MoS2 layer and efficient photon absorption/exciton generation in the QDs, which suggests their promising applications in the development of TMDC-based optoelectronic devices.

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