期刊
2D MATERIALS
卷 6, 期 3, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1583/ab1ed9
关键词
electronic devices; Esaki diodes; resonant tunneling diode; logic transistor; bipolar transistor; transition metal dichalcogenides; memory
资金
- National Science Foundation (NSF) [ECCS 16-11279, ECCS 16-53241 CAR]
- Office of Naval Research (ONR) [NAVY N00014-17-1-2973]
- Office of Naval Research [N00014-15-1-2368]
- NSF [ECCS-1542202]
- Minnesota MRSEC [NSF DMR-1420013]
- Army Research Office [W911NF-18-1-0268]
- National Science Foundation [EFMA-1542815]
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable electronic properties, with a bandgap that spans from semi-metallic up to 2 eV depending on the crystal phase, material composition, number of layers and even external stimulus. This paper provides an overview of the electronic devices and circuits based on 2D TMDs, such as Esaki diodes, resonant tunneling diodes (RTDs), logic and RF transistors, tunneling field-effect transistors (TFETs), static random access memories (SRAMs), dynamic RAM (DRAMs), flash memory, ferroelectric memories, resistitive memories and phase-change memories. We address the basic device principles, the advantages and limitations of these 2D electronic devices, and our perspectives on future developments.
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