期刊
NANO ENERGY
卷 59, 期 -, 页码 66-74出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2019.02.032
关键词
P-n heterojunction; Van der Waals epitaxial; Charge transfer; Photovoltaic; Photodetector
类别
资金
- National Natural Science Foundation of China [51525202, 51772084, 61574054, 61505051, 61474040, 61635001]
- Innovation Platform and Talent Plan of Hunan Province [2017RS3027]
- Program for Youth Leading Talent and Science and Technology Innovation of Ministry of Science and Technology of China
- Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
- Joint Research Fund for Overseas Chinese Scholars and Scholars in Hong Kong and Macao of the National Natural Science Foundation of China [61528403]
- Foundation for Innovative Research Groups of NSFC [21521063]
Two dimensional (2D) p-n heterostructures are demonstrated to be promising candidates for future integrated electronics and optoelectronics ascribing to their unique physical, optical and electrical properties. In this work, for the first time, we report the successful synthesis of high quality vertically stacked Sb2Te3/MoS2 heterostructures via van der Waals (vdW) epitaxial growth. Due to the p-type nature of Sb2Te3 and n-type nature of MoS2, the constructed Sb2Te3/MoS2 heterostructure-based devices can function as high performance rectifying diodes, and be further used as photodetectors and photovoltaics. As a result, the achieved p-n heterojunctions exhibit ultra-high current rectification ratio up to 10(6) and typical photon-to-electron conversion efficiency reaching 4.5%, both of which are much higher than all the previously reported 2D vdW heterojunctions grown by vapor deposition routes. Moreover, remarkable photoresponsivity (330 A/W) and fast photoresponse speed (< 500 mu s) are achieved, which also represent the highest values reported so far in similar systems. Combing the excellent electrical and optoelectrical properties, the achieved Sb2Te3/MoS2 heterostructures may find broad applications in future integrated electronics and optoelectronics devices and systems.
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