Article
Engineering, Electrical & Electronic
Mengyang Yuan, John Niroula, Qingyun Xie, Nitul S. Rajput, Kai Fu, Shisong Luo, Sagar Kumar Das, Abdullah Jubair Bin Iqbal, Bejoy Sikder, Mohamed Fadil Isamotu, Minsik Oh, Savannah R. Eisner, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomas Palacios
Summary: This letter presents an enhancement-mode GaN transistor technology that can operate in a simulated Venus environment for 10 days. The robustness of the transistor was evaluated through in-situ electrical characterization and advanced microscopy investigation. This is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, establishing it as a strong contender for harsh environment mixed-signal electronics.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Kai Fu, Shisong Luo, Houqiang Fu, Kevin Hatch, Shanthan Reddy Alugubelli, Hanxiao Liu, Tao Li, Mingfei Xu, Zhaobo Mei, Ziyi He, Jingan Zhou, Cheng Chang, Fernando A. Ponce, Robert Nemanich, Yuji Zhao
Summary: This study demonstrates threshold switching behaviors in GaN vertical p-n diodes with working temperatures up to 500 degrees C. The devices also survived a passive test in a simulated Venus environment for ten days. The research provides a critical reference for the development of GaN-based memory devices for harsh environments.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Ang Li, Yi Shen, Ziqian Li, Fan Li, Ruize Sun, Ivona Z. Mitrovic, Huiqing Wen, Sang Lam, Wen Liu
Summary: This paper reports the monolithic realization of on-chip temperature sensing design using four transistors (4T) in gallium nitride (GaN) technology. The temperature sensor consists of a voltage reference and a logic inverter, both built from enhancement-mode (E-mode) and depletion-mode (D-mode) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The temperature sensing solution shows stable sensing output, higher sensitivity, better linearity, and smaller error, making it suitable for monitoring the on-chip temperature of GaN power integrated circuits (ICs) for protection and control.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Automation & Control Systems
Juan Ignacio Sancho, Inaki Almandoz, Mikel Barandiaran, Javier Diaz, Jaizki Mendizabal
Summary: A scalable wireless wear monitoring system has been designed and deployed in a distributed harsh industrial environment, where installation of electronic equipment near wearing measuring locations is not feasible. The system utilizes a novel LC-type passive wireless wear sensor system and a sensor readout coil, and employs a double Holt-Winters method for data analysis. Laboratory measurements and on-site operation demonstrate high precision and sensitivity of the system.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Alexis C. Vilas Boas, M. A. A. de Melo, R. B. B. Santos, R. Giacomini, N. H. Medina, L. E. Seixas, S. Finco, F. R. Palomo, A. Romero-Maestre, Marcilei A. Guazzelli
Summary: The COTS power transistors based in GaN showed promising recovery performance in harsh environments after exposure to 10-keV X-rays, indicating their potential for practical applications.
MICROELECTRONICS RELIABILITY
(2021)
Review
Chemistry, Multidisciplinary
L. Keerthana, Mushtaq Ahmad Dar, Gnanaprakash Dharmalingam
Summary: This review focuses on the use of noble metal nanoparticles like Au embedded in metal oxides for gas sensing in high-temperature environments. It discusses the morphologies and plasmon resonance properties of AuNPs, their sensing capabilities on metal oxide matrices, and the effects of harsh gas environments. Various computational techniques and methods to enhance the application of such Au-metal oxide nanostructures are also explored.
CHEMISTRY-AN ASIAN JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Ratul K. Baruah, Bikram K. Mahajan, Yen-Pu Chen, Roy P. Paily
Summary: Silicon carbide is chosen for harsh environment applications due to its high critical electric field and radiation tolerance. Junctionless transistors show better performance than conventional MOSFETs at high temperatures.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Electrochemistry
Pietro Zaccagnini, Mara Serrapede, Marco Armandi, Stefano Bianco, Stefano Carminati, Massimo Zampato, Gianluca Melis, Candido Fabrizio Pirri, Andrea Lamberti
Summary: The study emphasizes the importance of energy storage devices that can operate in harsh environments and presents the evaluation of a prototype electrochemical supercapacitor's energy storage performance under high temperature and high pressure conditions. The results show that pressure affects dissipative parasite components of the device, while temperature strongly influences transport properties and capacitance.
ELECTROCHIMICA ACTA
(2023)
Article
Chemistry, Analytical
Kavin Sivaneri Varadharajan Idhaiam, Joshua A. Caswell, Peter D. Pozo, Katarzyna Sabolsky, Konstantinos A. Sierros, Daryl S. Reynolds, Edward M. Sabolsky
Summary: An all-ceramic passive wireless inductor-capacitor (LC) resonator was presented for stable temperature sensing up to 1200 degrees C in air. The LC resonator was modeled and fabricated using thermally stable and highly electroconductive ceramic oxide instead of conventional metallic electrodes. The experimental results showed that the proposed LC resonator exhibited improved sensitivity and quality factor at elevated temperatures.
Article
Chemistry, Physical
Claudia Cea, Zifang Zhao, Duncan J. Wisniewski, George D. Spyropoulos, Anastasios Polyravas, Jennifer N. Gelinas, Dion Khodagholy
Summary: Organic electronic devices are enhanced in biocompatibility and conformability, but limited in speed and integration compared to silicon-based technologies. To overcome this, a stand-alone, wireless, conformable, fully organic bioelectronic device with high electronic performance, scalability, stability, and conformability in physiologic media is created. The device is based on a vertical internal ion-gated organic electrochemical transistor (vIGT) architecture, which enables megahertz-signal-range operation and long-term stability in physiologic media.
Article
Nanoscience & Nanotechnology
Xiaochun Wang, Guangxue Chen, Ling Cai, Ren'ai Li, Minghui He
Summary: A simple photopolymerization approach was used to prepare a new type of transparent conductive polymer fiber, poly(PDES) fiber, which exhibits excellent stability in harsh environments and outstanding mechanical and sensing properties. The knitted poly(PDES) fibers can be used to create sensors for stable and accurate monitoring of human movements.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Optics
Zhiqiang Shao, Yalin Wu, Zhiqiang Sun, Wei Wang, Zhiyuan Liu, Chaozhu Zhang, Jiayu Bi, Erdong Song
Summary: This paper presents an all-sapphire-based EFPI sensor that calibrates pressure measurement with temperature, addressing the issue of repeatable measurement of dynamic pressure in harsh environments. The sensor has potential applications in various temperature and pressure ranges.
Article
Engineering, Environmental
Chi Yu, Jianhua Guo, Shixuan Lv, Xinghua Jiang
Summary: Graphene aerogels have shown great potential for thermal insulation and electromagnetic protection in the aerospace industry, but their weak mechanical properties have limited their applications. To solve this problem, researchers prepared zirconia fiber/reduced graphene oxide composite aerogels which exhibited exceptional mechanical properties and microwave absorption performance. Even after high- and low-temperature treatments, the composite aerogels still showed excellent performance, indicating their high potential for applications in space suits, spacecraft, and probes.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Chemistry, Multidisciplinary
Mengru Jiao, Minghao Wang, Ye Fan, Bangbang Guo, Bowen Ji, Yuhua Cheng, Gaofeng Wang
Summary: In this work, a MEMS piezoresistive micro pressure sensor is designed and fabricated with optimized micromachining process to control diaphragm thickness and piezoresistor isolation, improving linearity and sensitivity. Additionally, anodic bonding technology and digital temperature compensation system are utilized to enhance sensor performance.
APPLIED SCIENCES-BASEL
(2021)
Article
Engineering, Electrical & Electronic
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki
Summary: This study reports the successful operation of 4H-silicon carbide (SiC) MOSFET and integrated electronic circuit at temperatures up to 500 degrees C, with the reliability of metal/SiC contact playing a crucial role. The experimental results show that the voltage gain of the amplifier increases with temperature up to 300 degrees C, but slightly decreases above 300 degrees C.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Ahmad Hassan, Mostafa Amer, Yvon Savaria, Mohamad Sawan
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2020)
Article
Chemistry, Analytical
Ouafaa Ettahri, Aziz Oukaira, Mohamed Ali, Ahmad Hassan, Morteza Nabavi, Yvon Savaria, Ahmed Lakhssassi
Article
Engineering, Electrical & Electronic
Seyed Sepehr Mirfakhraei, Yves Audet, Ahmad Hassan, Mohamad Sawan
Summary: The paper introduces a novel galvanic isolated amplifier based on CMOS integrated Hall sensors, which integrates two serially connected Hall-effect sensors and their instrumentation amplifiers using the TSMC 65nm process. The proposed isolation amplifier is validated on a PCB and can be packaged in a chip for industrial applications due to its miniaturized size of isolation components.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2021)
Article
Engineering, Electrical & Electronic
Seyed Sepehr Mirfakhraei, Yves Audet, Ahmad Hassan, Mohamad Sawan
Summary: This article introduces a novel small-size on-chip digital isolator based on a CMOS integrated Hall-effect sensor. The isolator has a small chip area, making it suitable for medium-bitrate applications while reducing power consumption.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Mousa Karimi, Mohamed Ali, Ahmad Hassan, Mohamad Sawan, Benoit Gosselin
Summary: In this study, a dead-time control circuit is proposed to generate independent delays for the high and low sides of half-bridge converter switches, reducing losses and mitigating shoot-through current. Implemented in AMS 0.35 μm technology, the proposed circuit greatly decreases power losses in the half-bridge circuit.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Computer Science, Information Systems
Ahmad Hassan, Jean-Paul Noel, Yvon Savaria, Mohamad Sawan
Summary: This paper summarizes the research on implementing high temperature integrated circuits using Gallium Nitride (GaN) devices, including circuit testing and the study of passive component performance. The study found that logic gates showed good functionality at high temperatures and voltage reference circuits remained stable.
Article
Chemistry, Analytical
Aziz Oukaira, Ahmad Hassan, Mohamed Ali, Yvon Savaria, Ahmed Lakhssassi
Summary: This paper presents a method for monitoring thermal peaks in integrated circuit design. The method uses arrays of oscillators distributed over the chip to detect thermal peaks and obtain real-time local temperature information. The method does not require external sensors and enables real-time monitoring of thermal peaks.
Proceedings Paper
Computer Science, Information Systems
Aziz Oukaira, Djallel Eddine Touati, Ahmad Hassan, Mohamed Ali, Yvon Savaria, Ahmed Lakhssassi
Summary: This paper evaluates the thermal and thermo-mechanical behavior of a packaged sensor interface embedding several high and low-voltage integrated circuits (ICs) using numerical simulations. The study aims to assess the fatigue strength of the layers and materials, which are typically the weakest parts of integrated electronic devices. The simulations provide insights into thermal maps, thermal stresses, deformations, and predict the number of cycles until failure of the constituent layers.
2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS)
(2021)
Proceedings Paper
Computer Science, Hardware & Architecture
Touati Djallel Eddine, Aziz Oukaira, Ahmad Hassan, Yvon Savaria, Ahmed Lakhssassi
Summary: System in Package (SiP) is widely used for miniaturizing electronic systems, and a Foster based model has been proposed for accurate temperature prediction. The model accurately accounts for heat transfer between system layers and thermal coupling between dies, and has been validated through detailed 3D modeling with Simulink. This model can be used for real-time temperature prediction with confirmed accuracy through Finite Element Method (FEM) analysis.
2021 19TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS)
(2021)
Proceedings Paper
Computer Science, Hardware & Architecture
Isa Altoobaji, Mohamed Ali, Ahmad Hassan, Yves Audet, Ahmed Lakhssassi
Summary: This work presents the implementation and simulation of a high speed fully integrated capacitive digital isolation system in 0.35 mu m CMOS process. The proposed design uses pulse amplitude modulation scheme for high data rates and small integration area, eliminating the need for additional on-chip capacitor for low-frequency operation. Simulation results show support for data rates between 50 kbps and 500 Mbps with a propagation delay of only 2 ns, allowing for fast operation.
2021 19TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS)
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Mostafa Amer, Ahmed Abuelnasr, Ahmed Ragab, Ahmad Hassan, Mohamed Ali, Benoit Gosselin, Mohamad Sawan, Yvon Savaria
Summary: This paper presents the design and analysis of combining input-voltage feedforward and proportional-integral (PI) controllers for regulating the output voltage of a DC-DC Buck converter in the presence of input line disturbances. The stability boundary locus approach is used to analyze system stability graphically and guide the selection of controller gains and feedforward scaling factor to achieve desired phase and gain margins. The results demonstrate that the feedforward scaling factor significantly impacts the stability regions of the closed-loop system and can constrain the possible PI controller gains for specific phase and gain margins.
2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Mahin Esmaeilzadeh, Mohamed Ali, Ahmad Hassan, Yves Audet, Mohatnad Sawan
2020 18TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS'20)
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
Mousa Karimi, Mohamed Ali, Ahmad Hassan, Guillaume Weber-boisvert, Ahmed Abuelnasr, Mohamad Sawan, Benoit Gosselin
2020 18TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS'20)
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
Mostafa Amer, Mohamed Ali, Ahmed Abuelnasr, Ahmad Hassan, Morteza Nabavi, Yvon Savaria, Mohamad Sawan
2020 18TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS'20)
(2020)
