Improvement of NO2 gas-sensing properties in InGaZnO thin-film transistors by a pre-biasing measurement method

标题
Improvement of NO2 gas-sensing properties in InGaZnO thin-film transistors by a pre-biasing measurement method
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 34, Issue 6, Pages 065010
出版商
IOP Publishing
发表日期
2019-05-14
DOI
10.1088/1361-6641/ab2155

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