Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory

标题
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume -, Issue -, Pages -
出版商
IOP Publishing
发表日期
2019-05-17
DOI
10.1088/1361-6641/ab220f

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