4.6 Article

Element doping and semiconductor heterojunction forming enhance the photocatalytic performance of CdS/P-CN under visible light

期刊

MATERIALS CHEMISTRY AND PHYSICS
卷 233, 期 -, 页码 145-154

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2019.05.057

关键词

Element doping; Heterojunction; g-C3N4; Photocatalytic

资金

  1. National Natural Science Foundation of China [51472133]
  2. Natural Science Foundation of Shandong Province of China [ZR2012EMQ001]
  3. Basic Research program of Qingdao City of China [13-1-4-205-jch]

向作者/读者索取更多资源

The P-doped g-C3N4 (P-CN) has been synthesized by one-step method using diammonium hydrogen phosphate and urea. Then, the CdS/P-CN has been successfully prepared by using P-CN, thioacetamide and cadmium acetate with a hydrothermal method. The crystal structure and surface morphology of CdS/P-CN are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). X-ray photoelectron spectroscopy (XPS) indicates the presence of P-N bonds, Cd2+ and S2- in the nanocomposites. UV-visible spectra demonstrate the absorption range of visible light of the materials increased. The photocatalytic properties of CdS/P-CN are characterized by degradation of Rhodamine B under visible light which exhibits high photocatalytic degradation ability. At the end of the paper, a photocatalytic mechanism has been obtained based on the experimental results. The enhancement of photocatalytic properties was attribute to the doping of P and forming heterojunction, which changes the electronic structure of g-C3N4 and restrains the recombination rate of photogenerated electron-hole pairs.

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