Study on AlN buffer layer for GaN on graphene/copper sheet grown by MBE at low growth temperature

出版年份 2019 全文链接

标题

作者

关键词

Migration enhanced epitaxy, AlN buffer layer, Graphene insertion layer, III-Group nitride, Van der Waals epitaxy, Molecular beam epitaxy

出版物

Volume 783, Issue -, Pages 633-642

出版商

Elsevier BV

发表日期

2019-01-03

DOI

10.1016/j.jallcom.2019.01.007

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