Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

出版年份 2019 全文链接

标题

作者

关键词

出版物

Volume 66, Issue 4, Pages 1694-1698

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2019-03-13

DOI

10.1109/ted.2019.2901719

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