期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 4, 页码 526-529出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2900154
关键词
p-GaN gate HEMT; normally-off; drain induced dynamic V-th shift; charge storage; floating p-GaN
资金
- Guangdong Science and Technology Department [2017B010113002]
- Shenzhen Science and Technology Innovation Commission [JCYJ20170818113423666]
The drain induced dynamic threshold voltage (V-th) shift of a p-GaN gate HEMT with a Schottky gate contact is investigated, and the underlyingmechanisms are explained with a charge storage model. When the device experiences a high drain bias V-DSQ, the gate-to-drain capacitance (C-GD) is charged to Q(GD)(V-DSQ). As the drain voltage drops to V-DSM whereVth ismeasured, CGD is expected to be discharged to Q(GD)(V-DSM). However, themetal/p-GaN Schottky junction could block the discharging current, resulting in storage of negative charges in the p-GaN layer. For the device to turn on, additional gate voltage is required to counteract the stored negative charges, resulting in a positive shift of V-th. The dynamicVth shift is an intrinsic and predictable characteristic of the p-GaN gate HEMT which is linearly correlated with Delta Q(GD) = Q(GD)(V-DSQ)-Q(GD)(V-DSM). The V-th shift is dependent on V-DSQ as well as V-DSM, indicating that the V-th shift is varying along the load line during a switching operation.
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