Half-select free bit-line sharing 12T SRAM with double-adjacent bits soft error correction and a reconfigurable FPGA for low-power applications

出版年份 2019 全文链接

标题

作者

关键词

Low power, Static random access memory (SRAM), Static noise margin (SNM), Leakage power, Error tolerance

出版物

Volume 104, Issue -, Pages 10-22

出版商

Elsevier BV

发表日期

2019-03-11

DOI

10.1016/j.aeue.2019.02.018

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