Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors

标题
Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors
作者
关键词
-
出版物
ACS Nano
Volume 13, Issue 5, Pages 5430-5438
出版商
American Chemical Society (ACS)
发表日期
2019-04-12
DOI
10.1021/acsnano.9b00201

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