4.8 Article

In Situ TEM of Phosphorus-Dopant-Induced Nanopore Formation in Delithiated Silicon Nanowires

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 19, 页码 17313-17320

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b20436

关键词

silicon nanowires; phosphorus dopant; lithiation/delithiation cycling; nanopore formation; phase-field simulation; lithium ion batteries

资金

  1. National 1000 Talents Program of China tenable at the Huazhong University of Science and Technology (HUST), China
  2. National Natural Science Foundation of China [21802065]
  3. Shenzhen DRC project [[2018]1433]
  4. Pico Center at SUSTech - Presidential fund
  5. Development and Reform Commission of Shenzhen Municipality
  6. DOE's Office of Biological and Environmental Research
  7. DOE [DE-AC05-76RLO1830]

向作者/读者索取更多资源

Through in situ transmission electron microscopy (TEM) observation, we report the behaviors of phosphorus (P)-doped silicon nanowires (SiNWs) during electrochemical lithiation/delithiation cycling. Upon lithiation, lithium (Li) insertion causes volume expansion and formation of the crystalline Li15Si4 phase in the P-doped SiNWs. During delithiation, vacancies induced by Li extraction aggregate gradually, leading to the generation of nanopores. The as-formed nanopores can get annihilated with Li reinsertion during the following electrochemical cycle. As demonstrated by our phase-field simulations, such first-time-observed reversible nanopore formation can be attributed to the promoted lithiation/delithiation rate by the P dopant in the SiNWs. Our phase-field simulations further reveal that the delithiation-induced nanoporous structures can be controlled by tuning the electrochemical reaction rate in the SiNWs. The findings of this study shed light on the rational design of high-power performance Si-based anodes.

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