An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer

标题
An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer
作者
关键词
Photocathode, Solar water splitting, InGaN, Nanowire, Tunnel junction
出版物
Nano Energy
Volume 57, Issue -, Pages 405-413
出版商
Elsevier BV
发表日期
2018-12-22
DOI
10.1016/j.nanoen.2018.12.067

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