4.8 Article

Flexible Near-Infrared Photovoltaic Devices Based on Plasmonic Hot-Electron Injection into Silicon Nanowire Arrays

期刊

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 55, 期 14, 页码 4577-4581

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201600279

关键词

flexible devices; hot electrons; photovoltaics; plasmonics; silicon

资金

  1. NSFC [91123010, 21471141]
  2. Specialized Research Fund for the Doctoral Program of Higher Education [20123402110050]
  3. Recruitment Program of Global Experts
  4. CAS Hundred Talent Program
  5. Hefei Science Center CAS [2015HSC-UP009]
  6. Fundamental Research Funds for the Central Universities [WK2060190025, WK2310000035]

向作者/读者索取更多资源

The development of flexible near-infrared (NIR) photovoltaic (PV) devices containing silicon meets the strong demands for solar utilization, portability, and sustainable manufacture; however, improvements in the NIR light absorption and conversion efficiencies in ultrathin crystalline Si are required. We have developed an approach to improve the quantum efficiency of flexible PV devices in the NIR spectral region by integrating Si nanowire arrays with plasmonic Ag nanoplates. The Ag nanoplates can directly harvest and convert NIR light into plasmonic hot electrons for injection into Si, while the Si nanowire arrays offer light trapping. Taking the wavelength of 800nm as an example, the external quantum efficiency has been improved by 59% by the integration Ag nanoplates. This work provides an alternative strategy for the design and fabrication of flexible NIR PVs.

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