Article
Chemistry, Physical
Hai-Qing Xie, Kai-Yue Cui, Xi-Ya Cai, Zhi-Qiang Fan, Dan Wu
Summary: This study investigates the characteristics of metal-semiconductor-metal structures with symmetrical and asymmetrical Schottky contacts using two-dimensional SiC material as the channel and four different metal materials as electrodes. The study examines various properties such as transmission spectra, current-voltage characteristics, local density of states, rectification ratio, current-temperature characteristics, and negative differential thermoelectric resistance. The results show that asymmetrical metal electrode structures exhibit excellent rectification characteristics, with the optimal rectification ratio achieved using Pd and Au as electrodes. Additionally, temperature-dependent thermionic excitation transport has a significant impact on the rectification properties of the devices. One key finding is the generation of negative differential thermoelectric resistance in the Pd-SiC-Au devices when a temperature difference is applied without external bias voltage. These findings provide valuable theoretical references for the design of transistors and other devices based on 2D SiC material.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Jianqun Geng, Lei Gao, Baijin Li, Hangjing Zhou, Jianchen Lu, Jinming Cai
Summary: In this study, the researchers systematically investigated the contact properties between Cu2Se monolayer and a series of experimentally fabricated 2D metals. They found that H-NbSe2 is the most adaptable electrode for monolayer Cu2Se and discovered the fermi level pinning effects in these metal-semiconductor junctions.
APPLIED SURFACE SCIENCE
(2023)
Review
Nanoscience & Nanotechnology
Junhao Ni, Quangui Fu, Kostya (Ken) Ostrikov, Xiaofeng Gu, Haiyan Nan, Shaoqing Xiao
Summary: This article introduces various methods to achieve Ohmic contacts on two-dimensional materials and reveals their physical mechanisms. The research findings are of great significance for improving the performance of two-dimensional semiconductor devices.
Article
Chemistry, Physical
Kun Liu, Jiangtao Cheng, Xingju Zhao, Yandi Zhu, Xiaoyan Ren, Jinlei Shi, Zhengxiao Guo, Chongxin Shan, Hongjie Liu, Shunfang Li
Summary: Near-zero and negative differential friction coefficients were discovered in two-dimensional van der Waals magnetic CrI3, mainly due to the ferromagnetic-antiferromagnetic phase transition of the interlayer couplings and the phase transition of the wave functions, which result in changes in the interface sliding energy barriers. These findings may have significant implications in slide-spintronics and the design of spintronic nano-devices.
Article
Physics, Condensed Matter
Nihad Abuawwad, Manuel Dos Santos Dias, Hazem Abusara, Samir Lounis
Summary: This paper reports a strong magnetoelastic coupling in a free-standing monolayer of CrTe2 and demonstrates the emergence of non-collinear magnetism due to different crystal structures. The complex magnetic properties of this 2D material affected by various structural distortions were investigated using atomistic spin dynamics.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2022)
Article
Nanoscience & Nanotechnology
Rong Zhao, Yongting Chen, Hui Xiang, Yunfeng Guan, Chenfan Yang, Qin Zhang, Yanjun Li, Ye Cong, Xuanke Li
Summary: Density functional theory calculations were used to predict the potential of 18 two-dimensional (2D) ordered double-transition metal carbides (MXenes) as electrocatalysts for the nitrogen reduction reaction (NRR). The Mo2Nb2C3 MXene showed the highest catalytic activity on its basal plane while effectively suppressing the hydrogen evolution reaction with an overpotential of 0.48 V. The Mo3 moiety on the surface played a crucial role in regulating electron transfer between reaction intermediates, leading to its high activity. This finding expands the potential of 2D materials as NRR electrocatalysts.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Xinxin Wang, Shiqiang Yu, Yushuo Xu, Baibiao Huang, Ying Dai, Wei Wei
Summary: In the current stage, conventional silicon-based devices face limitations in scaling and Fermi level pinning effect. Therefore, the search for low-resistance metal contacts for semiconductors, especially two-dimensional (2D) metal/semiconductor contacts, has become crucial. However, the practical applications of these contacts are hindered by the Schottky barrier and tunneling barrier. To address this issue, this work proposes a new strategy of constructing a donor-acceptor heterostructure, Ca2N/MoS2, to reduce the contact potential barrier. The results demonstrate excellent performance of n-type Ohmic contact formation between Ca2N and MoS2, as well as the potential for forming Ohmic contacts with other TMDCs like WS2, MoSe2, WSe2, and MoTe2.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Mengyu Hong, Xiankun Zhang, Yu Geng, Yunan Wang, Xiaofu Wei, Li Gao, Huihui Yu, Zhihong Cao, Zheng Zhang, Yue Zhang
Summary: Metal-semiconductor contacts play a crucial role in semiconductor devices. Researchers propose a nanobelt-assisted transfer strategy that enables the universal transfer of over 20 different types of electrodes. The contacts prepared using this strategy exhibit low Schottky barriers and adhere to the Schottky-Mott rule.
Article
Chemistry, Physical
Yao Guo, Yan Sun, Alvin Tang, Ching-Hua Wang, Yanqing Zhao, Mengmeng Bai, Shuting Xu, Zheqi Xu, Tao Tang, Sheng Wang, Chenguang Qiu, Kang Xu, Xubiao Peng, Junfeng Han, Eric Pop, Yang Chai
Summary: This study reveals a metal-insulator-semiconductor field effect at the electrical contacts to 2D materials, which is crucial for the design, simulation, and fabrication of electronics based on 2D materials.
Article
Chemistry, Physical
Gihyeon Kwon, Hyeon-Sik Kim, Kwangsik Jeong, Myeongjin Kim, Gi Hwan Nam, Hyunjun Park, Kyunghwa Yoo, Mann-Ho Cho
Summary: High-performing 2D electrical and optical devices require an ideal van der Waals (vdW) metal contact. This study proposes a method for forming vdW contacts using a sacrificial Se buffer layer, which results in a stable and ideal vdW interface. The study investigates the difference in Schottky barrier height between vdW metal contacts made with buffer layer, transferred, and directly deposited methods. The results show that the Se buffer layer method forms the most stable and ideal vdW contact, preventing Fermi-level pinning.
Article
Nanoscience & Nanotechnology
Jimin Park, Jangyup Son, Sang Kyu Park, Dong Su Lee, Dae-Young Jeon
Summary: In this study, a two-dimensional material-based complementary ambipolar FET was fabricated and its electrical characteristics were investigated. Optimizing the MoS2 or WSe2 channels enabled achieving symmetry of electron and hole currents, unlike conventional ambipolar FETs with fundamental issues related to Schottky barriers. Additionally, successful operation of a complementary inverter and OPC amplifier was demonstrated using the fabricated complementary ambipolar FET based on 2D materials.
Article
Chemistry, Multidisciplinary
Qingrui Cao, Evan J. Telford, Avishai Benyamini, Ian Kennedy, Amirali Zangiabadi, Kenji Watanabe, Takashi Taniguchi, Cory R. Dean, Benjamin M. Hunt
Summary: We introduce a novel planar tunneling architecture based on metallic contacts embedded into hBN through-holes, and study the impact of tunnel-contact area and barrier strength on the single-particle density of states of NbSe2 and graphene. We demonstrate a crossover from diffusive to point contacts in NbSe2 devices with 0-layer hBN, and show that reducing the tunnel barrier thickness and area can suppress effects due to phonon-assisted tunneling and defects in the hBN barrier in graphene.
Article
Chemistry, Multidisciplinary
Nanxi Miao, Yutong Gong, Huaiyu Zhang, Qing Shen, Rui Yang, Jianping Zhou, Hideo Hosono, Junjie Wang
Summary: We discovered a family of ternary hexagonal MAB phases and 2D hexagonal MBenes through ab initio predictions and experiments. Calculations show that the ternary hexagonal MAB phases are better precursors for MBenes than the orthorhombic MAB phases. Based on this prediction, we successfully synthesized a 2D hexagonal MBene HfBO by selectively removing In from the hexagonal MAB Hf2InB2. The synthesized HfBO exhibited a specific capacity of 420 mAh/g as an anode material in lithium-ion batteries, demonstrating its potential for energy-storage applications.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Physics, Applied
Liemao Cao, Xiaohui Deng, Zhenkun Tang, Guanghui Zhou, Yee Sin Ang
Summary: Forming a low-resistance semiconductor-metal contact is crucial for high-performance 2D semiconductor nanoelectronic devices. In this study, the interface contact properties of gamma-GeSe with different metallic systems were computationally investigated. Results showed that these metals exhibited rich contact formation physics with gamma-GeSe, forming heterostructures with weak and moderate couplings. Notably, gamma-GeSe/NbS2 showed an Ohmic contact and gamma-GeSe/Bi showed an n-type Schottky contact with an ultralow barrier height. The electronic properties of gamma-GeSe/graphene contact could be adjusted using interlayer distance or external electric field. Additionally, layer-number engineering of gamma-GeSe allowed further control of contact properties.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Thomas F. Schranghamer, Najam U. Sakib, Muhtasim Ul Karim Sadaf, Shiva Subbulakshmi Radhakrishnan, Rahul Pendurthi, Ama Duffle Agyapong, Sergei P. Stepanoff, Riccardo Torsi, Chen Chen, Joan M. Redwing, Joshua A. Robinson, Douglas E. Wolfe, Suzanne E. Mohney, Saptarshi Das
Summary: This study investigates the impact of contact scaling on FET performance by examining Au contacts to monolayer MoS2 FETs with reduced channel length (LCH) and contact length (LC). The results show that when LC is scaled from 300 to 20 nm, Au contacts exhibit a reduction in the ON-current of approximately 2.5x, from 519 to 206 mu A/ mu m.
Article
Nanoscience & Nanotechnology
Han Xiao, Tao Liang, Xuewei Zhang, Pei Zhang, Xiaodong Pi, Quan Xie, Mingsheng Xu
Article
Multidisciplinary Sciences
Mohammad Rezwan Habib, Weijia Wang, Afzal Khan, Yahya Khan, Sk Md Obaidulla, Xiaodong Pi, Mingsheng Xu
ADVANCED THEORY AND SIMULATIONS
(2020)
Article
Chemistry, Multidisciplinary
Yahya Khan, Sk. Md. Obaidulla, Mohammad Rezwan Habib, Anabil Gayen, Tao Liang, Xuefeng Wang, Mingsheng Xu
Article
Chemistry, Physical
Afzal Khan, Mohammad Rezwan Habib, Cong Jingkun, Mingsheng Xu, Deren Yang, Xuegong Yu
Summary: This study investigates the direct chemical vapor deposition growth of graphene on Si(100) surfaces without a metal catalyst, emphasizing the formation of silicon carbide (SiC) buffer layers at high temperatures. The results suggest the need to reconsider the metal-catalyst-free direct growth of graphene on Si substrates using thermal CVD systems.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Materials Science, Multidisciplinary
Han Xiao, Tao Liang, Jing Xu, Mingsheng Xu
Summary: This study successfully synthesized a monolithic 2D CH3NH3PbI3/PbI2 vertical heterostructure by leveraging the exceptional optoelectronic properties of perovskite and 2D materials, leading to the construction of flexible photodetectors. These photodetectors exhibit excellent performance under various laser wavelengths and particularly show high current on/off ratio, detectivity, responsivity, and response speed under 375 nm illumination. The work provides a facile approach to 2D vertical semiconducting heterostructures for potential high-performance integrated optoelectronics applications.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Qinghai Zhu, Peng Ye, Youmei Tang, Xiaodong Zhu, Zhiyuan Cheng, Jing Xu, Mingsheng Xu
Summary: This study reports on Mg2Si/Si heterojunction photodetectors with a broadband spectral response, offering advantages such as low cost, ease of processing, environmental friendliness, and compatibility with silicon CMOS technology. The performance of the photodetectors is significantly improved by the assembly of Ag nanoparticles on the Mg2Si layer. The enhanced photodetection performance is attributed to the high-quality Mg2Si material, the strong built-in electric field effect in the heterojunction, and the local surface plasmon effect induced by Ag nanoparticles.
Article
Chemistry, Multidisciplinary
Yuhan Kong, Sk Md Obaidulla, Mohammad Rezwan Habib, Zukun Wang, Rong Wang, Yahya Khan, Haiming Zhu, Mingsheng Xu, Deren Yang
Summary: Heterostructures built from two-dimensional materials and organic semiconductors have unique advantages in addressing fundamental physics and constructing functional devices. We report the interlayer exciton emission in a heterostructure of pyramidal VOPc and transition metal dichalcogenide monolayer MoS2, which provides a new avenue to tune the optoelectronic properties of heterojunctions consisting of 2D materials and organic semiconductors.
MATERIALS HORIZONS
(2022)
Article
Nanoscience & Nanotechnology
Yichun Zhang, Kejia Wang, Yishan Sun, Mingsheng Xu, Zhiyuan Cheng
Summary: The transparent thermal management material TPE-TES, based on polyethylene glycol and epoxy resin, combines high transparency with temperature regulation and thermal energy storage capabilities, making it suitable for integrated transparent electronic devices.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Han Xiao, Wenzhuo Zhuang, Leyi Loh, Tao Liang, Anabil Gayen, Peng Ye, Michel Bosman, Goki Eda, Xuefeng Wang, Mingsheng Xu
Summary: This work demonstrates the van der Waals epitaxial growth of air-stable 2D magnetic CrS2 on mica substrate by chemical vapor deposition (CVD). The CrS2 crystallites exhibit a metallic behavior with a moderate conductivity and room-temperature ferromagnetism. The results offer a new platform for further research and spintronic device applications.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Yiping Hu, Qinghai Zhu, Jiabao Sun, Yijun Sun, Nobutaka Hanagata, Mingsheng Xu
Summary: PdSe2/Si heterojunction photodetectors with different thicknesses of PdSe2 films were designed and fabricated, and the photodetector with a 35nm PdSe2 film exhibited better performance. The PDs showed high responsivity and specific detectivity at 808nm wavelength. Additionally, the PdSe2/Si PD array demonstrated excellent uniformity and stability at room temperature, showing potential for image sensing in the UV-vis-NIR wavelength range.
Article
Materials Science, Multidisciplinary
Ali Imran, Qinghai Zhu, Muhammad Sulaman, Arfan Bukhtiar, Mingsheng Xu
Summary: The demand for CCD imagers has grown exponentially due to their high quality and low noise imaging. This research demonstrates the operation of a gateless phototransistor using high-k HfO2 dielectric material, which eliminates the need for external gate bias. The device shows remarkable performance in a broad spectrum and has the potential to be used in the future machine vision market.
ADVANCED OPTICAL MATERIALS
(2023)
Correction
Chemistry, Multidisciplinary
Yuhan Kong, Sk Md Obaidulla, Mohammad Rezwan Habib, Zukun Wang, Rong Wang, Yahya Khan, Haiming Zhu, Mingsheng Xu, Deren Yang
MATERIALS HORIZONS
(2022)
Article
Engineering, Electrical & Electronic
Jingkun Cong, Afzal Khan, Jiajun Li, Ying Wang, Mingsheng Xu, Deren Yang, Xuegong Yu
Summary: The study demonstrates a method to grow large-area graphene nanowalls (GNWs) on a Si substrate using plasma-enhanced atomic layer deposition (PEALD) technique and develop high-performance GNWs-Si heterostructure infrared photodetectors (PDs). The fabricated PD exhibits excellent light absorption and high responsivity, fast response speed, and high specific detectivity, showing great potential for Si-based optoelectronics.
ACS APPLIED ELECTRONIC MATERIALS
(2021)