期刊
NANO LETTERS
卷 19, 期 4, 页码 2682-2687出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b00649
关键词
Electrostatic gating; ARPES; NanoARPES; bilayer graphene; van der Waals heterostructure; electronic structure
类别
资金
- UCOP
- Army Research Office [W911NF-17-1-0473]
- ANRT [2016/1294]
- Elemental Strategy Initiative
- A3 Foresight by JSPS
- CREST, JST [JPMJCR15F3]
- [ANR-14-CE08-018-05]
Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to noninvasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with submicron spatial resolution, we have investigated a heterostructure composed of Bernal-stacked bilayer graphene (BLG) on hexagonal boron nitride and deposited on a graphite flake. By voltage biasing the latter, the electric field effect is directly visualized on the valence band as well as on the carbon is core level of BLG. The band gap opening of BLG submitted to a transverse electric field is discussed and the importance of intra layer screening is put forward. Our results pave the way for new studies that will use momentum-resolved electronic structure information to gain insight on the physics of materials submitted to the electric field effect.
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